IRG4IBC20UDPBF Datasheet PDF - International Rectifier
| Part Number | IRG4IBC20UDPBF | |
| Description | INSULATED GATE BIPOLAR TRANSISTOR | |
| Manufacturers | International Rectifier | |
| Logo |  |
|
|
There is a preview and IRG4IBC20UDPBF download ( pdf file ) link at the bottom of this page. Total 10 Pages | ||
Preview 1 page No Preview Available !
PD -94917A
IRG4IBC20UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink
VCES = 600V
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
• Tighter parameter distribution
• Industry standard Isolated TO-220 FullpakTM
G
E
n-channel
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
outline
• Lead-Free
Benefits
• Simplified assembly
• Highest efficiency and power density
• HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
Visol
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
TO-220 FULLPAK
Max.
600
11.4
6.0
52
52
6.5
52
2500
± 20
34
14
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
–––
2.0 (0.07)
Max.
3.7
5.1
65
–––
Units
°C/W
g (oz)
1
01/28/2010
|
| |
 
1000
VGE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
800 Coes = C ce + C gc
Cies
600
Coes
400
Cres
200
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4IBC20UDPbF
20 VCE = 400V
IC = 6.5A
16
12
8
4
0A
0 5 10 15 20 25 30
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.32 VCC = 480V
VGE = 15V
TJ = 25°C
I C = 6.5A
0.31
0.30
0.29
0
10 20 30 40 50
R G, Gate Resistance ( Ω)
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10 RG = 50 Ω
VGE = 15V
VCC = 480V
IC = 13A
1
IC = 6.5A
IC = 3.3A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRG4IBC20UDPBF electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRG4IBC20UDPBF.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| IRG4IBC20UDPBF | The function is INSULATED GATE BIPOLAR TRANSISTOR. International Rectifier | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
IRG4
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||