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GeneSiC - Silicon Fast Recovery Diode

Numéro de référence FR6M05
Description Silicon Fast Recovery Diode
Fabricant GeneSiC 
Logo GeneSiC 





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FR6M05 fiche technique
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 600 V to 1000 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
FR6J05 thru FR6MR05
VRRM = 600 V - 1000 V
IF = 6 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
FR6J(R)05
FR6K(R)05
FR6M(R)05
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS
VDC
IF
TC 100 °C
600
420
600
6
800 1000
560 700
800 1000
66
Surge non-repetitive forward
current, Half Sine Wave
IF,SM TC = 25 °C, tp = 8.3 ms
135
135
135
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FR6J(R)05
Diode forward voltage
Reverse current
Recovery Time
Maximum reverse recovery
time
Thermal characteristics
Thermal resistance, junction
- case
VF IF = 6 A, Tj = 25 °C
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
TRR
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
RthJC
1.4
25
6
500
2.5
FR6K(R)05
1.4
25
6
500
2.5
FR6M(R)05
1.4
25
6
500
2.5
Unit
V
V
V
A
A
°C
°C
Unit
V
μA
mA
nS
°C/W
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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