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FR85B02 fiches techniques PDF

GeneSiC - Silicon Fast Recovery Diode

Numéro de référence FR85B02
Description Silicon Fast Recovery Diode
Fabricant GeneSiC 
Logo GeneSiC 





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FR85B02 fiche technique
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 100 V to 600 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
FR85B02 thru FR85JR02
VRRM = 100 V - 600 V
IF = 85 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
FR85B(R)02 FR85D(R)02 FR85G(R)02
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
VRRM
VRMS
VDC
100 200 400
70 140 280
100 200 400
Continuous forward current
IF
TC 100 °C
85
85
85
FR85J(R)02 Unit
600 V
420 V
600 V
85 A
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
Tj
Tstg
1369
-55 to 150
-55 to 150
1369
-55 to 150
-55 to 150
1369
-55 to 150
-55 to 150
1369
-55 to 150
-55 to 150
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FR85B(R)02 FR85D(R)02
Diode forward voltage
Reverse current
Recovery Time
Maximum reverse recovery
time
VF IF = 85 A, Tj = 25 °C
IR
VR = 100 V, Tj = 25 °C
VR = 100 V, Tj = 125 °C
TRR
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
1.3
25
20
200
1.3
25
20
200
FR85G(R)02
1.3
25
20
200
FR85J(R)02
1.3
25
20
Unit
V
μA
mA
250 nS
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
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