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1N1183 Datasheet دیتاشیت PDF دانلود

دیتاشیت - GeneSiC - Silicon Standard Recovery Diode

شماره قطعه 1N1183
شرح مفصل Silicon Standard Recovery Diode
تولید کننده GeneSiC 
آرم GeneSiC 


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1N1183 شرح
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 50 to 300 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N1183 thru 1N1187R
VRRM = 50 V - 300 V
IF = 35 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
IF,SM
Tj
Tstg
TC 140 °C
TC = 25 °C, tp = 8.3 ms
50 100 200
35 70 140
50 100 200
35 35 35
595 595 595
-55 to 150 -55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150
300
210
300
35
595
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Unit
Diode forward voltage
VF IF = 35 A, Tj = 25 °C 1.2 1.2 1.2 1.2 V
Reverse current
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 140 °C
10
10
10
10
10
10
10 μA
10 mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.25 0.25 0.25 0.25 °C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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