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CHA5014-99F fiches techniques PDF

United Monolithic Semiconductors - X Band HBT Driver Amplifier

Numéro de référence CHA5014-99F
Description X Band HBT Driver Amplifier
Fabricant United Monolithic Semiconductors 
Logo United Monolithic Semiconductors 





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CHA5014-99F fiche technique
CHA5014-99F
RoHS COMPLIANT
X Band HBT Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5014 chip is a monolithic two-
stage medium power amplifier designed for
X band applications. Moreover this
amplifier is relevant for systems that
require an output power weakly sensitive to
temperature.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridges. A nitride
layer protects the transistors and the
passive components.
A special control circuit is implemented to
stabilize the output power in temperature.
Main Features
30dBm Saturated output power
Temperature compensated Output power
Two biasing modes:
- Digital control thanks to TTL interface
- Analog control thanks to Biasing circuit
Quiescent bias point: 8.5V@230mA
Chip size: 2.87 x 1.37 x 0.1mm3
Pout & PAE @ 1dBc and Linear Gain (Tamb 20°C)
Main Characteristics
Tamb = +20°C, Vc = +8.5V (Pulse 100µs 20%)
Symbol
Parameter
Min Typ Max
Fop Operating frequency range
8.5 11
G Small signal gain
20
P1dB
Output power at 1dB gain compression
29
Icq Power supply quiescent current
230
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Unit
GHz
dB
dBm
mA
Ref. : DSCHA50141097 - 07 Apr 11
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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