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PDF CHA4250-QDG Data sheet ( Hoja de datos )
| Número de pieza | CHA4250-QDG | |
| Descripción | 5.5-11GHz Medium Power Amplifier | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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CHA4250-QDG
5.5-11GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA4250-QDG is a three stages
monolithic GaAs medium power amplifier
circuit.
It is designed for commercial communication
systems.
The circuit is manufactured with a pHEMT
process, 0.5µm gate length.
Main Features
■ Broadband performances: 5.5-11GHz
■ 26dB Linear Gain
■ 23.5dBm output power @1dB comp.
■ 31dBm output TOI
■ 25% PAE@ 1dB compression
■ DC bias: Vd=7Volt@Id=125mA
■ 24L-QFN4x4
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
2
Gain & RLoss
S11
S21
S22
7 12
Frequency (GHz)
17
22
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
OTOI Output TOI
Pout Output Power @1dB comp.
Min Typ Max Unit
5.5 11.0 GHz
26.0 dB
31.0 dBm
23.5 dBm
Ref. : DSCHA4250-QDG3021 - 21 Jan 13
1/14 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page  
5.5-11GHz Medium Power Amplifier
CHA4250-QDG
Typical Board Measurements
Tamb.=+25°C, Vd1=Vd2=Vd3=+7.0V, Idq=125mA
Measurement in the QFN planes as defined in paragraph “Definition of the Sij reference
planes”
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
2
Linear Gain & Return Loss
S11
S21
S22
4 6 8 10 12 14
Frequency (GHz)
Linear Gain versus Drain voltage and Frequency
30
29
28
27
26
25
24
23
22
21
7V 6V
20
19
18
4 5 6 7 8 9 10 11 12
Frequency (GHz)
Ref. : DSCHA4250-QDG3021 - 21 Jan 13
5/14 Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page 
5.5-11GHz Medium Power Amplifier
CHA4250-QDG
Evaluation mother board
■ Compatible with the proposed footprint.
■ Based on typically Ro4003 / 8mils or equivalent.
■ Using a micro-strip to coplanar transition to access the package.
■ Recommended for the implementation of this product on a module board.
■ First decoupling network is done with 100pF capacitors, second decoupling network is
done with 10nF capacitors.
■ See application note AN0017 for details.
Ref. : DSCHA4250-QDG3021 - 21 Jan 13
11/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet CHA4250-QDG.PDF ] | |
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