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United Monolithic Semiconductors - 81-86GHz Medium Power Amplifier

Numéro de référence CHA3090-98F
Description 81-86GHz Medium Power Amplifier
Fabricant United Monolithic Semiconductors 
Logo United Monolithic Semiconductors 





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CHA3090-98F fiche technique
CHA3090-98F
81-86GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3090-98F is a three-stage
monolithic Medium Power Amplifier. This
circuit includes a power detector which
integrates a directional coupler, a detection
diode and a reference diode to be used in
differential mode.
It is dedicated to E-band telecommunication,
particularly well suited for the new generation
of high capacity Backhaul.
The circuit is manufactured with a pHEMT
process, 0.1µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form with BCB layer
protection.
Vd1
IN
Vg1
Vd2h
Vd3h
Vg3h
OUT
Vg2 Vg3b
Vd2b
Vd3b
Vdet
Vref
Dc
Functional diagram
Main Features
Broadband performances: 81-86GHz
13dB linear gain
17dBm power at 1dB compression
20dB power detector dynamic range
BCB layer protection
DC bias: Vd=3.5V@Id=280mA
Chip size 3.36x1.78x0.07mm
22
20
18
16
14
12
10
8
6
79
Output Power (dBm) and Linear Gain (dB)
P-1dB
P-3dB
S21
80 81 82 83 84 85 86 87
Frequency (GHz)
24
22
20
18
16
14
12
10
8
88
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
81 86 GHz
Gain Linear Gain
13 dB
P1dB Output Power @1dB comp.
17 dBm
Psat Saturated Output Power
19 dBm
Dr Detection dynamic range (for output power
detection up to Psat)
20
dB
Ref. : DSCHA30903245 - 02 Sep 13
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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