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PDF CHA3024-QGG Data sheet ( Hoja de datos )
| Número de pieza | CHA3024-QGG | |
| Descripción | 2-22GHz LNA | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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CHA3024-QGG
2-22GHz LNA with AGC
GaAs Monolithic Microwave IC
Description
The CHA3024-QGG is a distributed Low
Noise Amplifier with Adjustable Gain Control
(AGC) that operates between 2 and 22GHz.
It is designed for a wide range of
applications, such as electronic warfare, X
and Ku Point to Point Radio, and test
instrumentation.
The circuit is manufactured using a 0.15µm
gate length pHEMT process, with via holes
through the substrate, air bridges and optical
gate lithography.
The part is supplied as 5x5 QFN package
with input and output RF accesses matched
to 50 ohms.
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Main Features
■ Broadband performances: 2-22GHz
Linear Gain, Return Losses (dB)
■ Typical Linear Gain: 15dB
20
UMS■ Up to 30dB AGC with Vg2
■ P1dB: 18dBm
■ Psat: 20dBm
■ OIP3: 28dBm
■ Typical Noise Figure: 3dB
■ DC bias: Vd=5V@Id=100mA, Vg1=-0.3V
and Vg2=1.7V.
■ 28L QFN 5x5
15
10
5
0
-5 S11(dB)
S22(dB)
-10 S21(dB)
-15 Noise (dB)
-20
-25
-30
0 2 4 6 8 10 12 14 16 18 20 22 24
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp.
Min Typ Max Unit
2 22 GHz
15 dB
3 dB
18 dBm
Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 1/16 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page  
2-22GHz LNA with AGC
CHA3024-QGG
Typical Board Measurements
Tamb.= +25°C, Vd=5V, Vg1 set in order to get Idq =100mA, Vg2=1.7V
20
15
10
5
0
-5
-10
-15
-20
-25
-30
0
LineLairnGeaainr aGndaiRne,tuRrnetLuosrsnesLvoesrssuessFr(edqBue)ncy
S11(dB)
S22(dB)
S21(dB)
2 4 6 8 10 12 14 16 18 20 22 24 26
Frequency (GHz)
Noise FNigouisree Fviegrusrues(fdrBeq) uency
10
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Frequency (GHz)
Ref. : DSCHA3024-QGG-4346 - 12 Dec 14
5/16 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page 
2-22GHz LNA with AGC
Application Circuit:
Vg2
10nF
100pF
1
RFIN
4
CHA3024-QGG
Vd
100pF
10nF
25
19 RFOUT
CHA3024-QGG
13
100pF
10nF
Vg1
Depending on the board, additional capacitors such as 1µF may be added on each biasing
access if necessary, for better low frequency decoupling.
Pin Description:
Pin
5,18, 29 (exposed PAD)
2,3,6,7,8,9,10,11,12,14,15,
16,17,20,21,22,23,24,26,27,28
4
13
19
25
1
Symbol
GND
NC
RF IN
VG1
RF OUT
VD
VG2
Description
Must be grounded properly, internal
connections to ground are made
No internal connections
RF input
Gate voltage, bias network required
RF output
Drain voltage, bias network required
Gate voltage bias network required
UMS recommends also to ground Pin 2,3,5,6,7,15,16,17,18,20,21 (see proposed footprint
p14).
Ref. : DSCHA3024-QGG-4346 - 12 Dec 14
11/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet CHA3024-QGG.PDF ] | |
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