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PDF CHA2110-98F Data sheet ( Hoja de datos )
| Número de pieza | CHA2110-98F | |
| Descripción | 7-12GHz LNA | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CHA2110-98F (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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CHA2110-98F
7-12GHz LNA
GaAs Monolithic Microwave IC
Description
The CHA2110-98F is a monolithic two-stages
wide band low noise amplifier circuit. It is
self-biased.
It is designed for military, space and
telecommunication systems.
VD1 VD2
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, and air bridges.
IN
It is available in chip form.
OUT
Main Features
■ Broadband performances: 7-12GHz
■ Linear gain: 19dB
■ Return Losses: 12dB
■ Noise Figure: 1.2dB
■ Output power @ 1dBcomp: 11dBm
■ DC bias: Vd=4 Volt@Id=45mA
■ Chip size 1.93x1.3x0.1mm
25 5.0
24 4.5
23 4.0
22 3.5
21
20 S21
3.0
2.5
19 2.0
18 1.5
17 NF 1.0
16 0.5
15 0.0
7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0
Frequency (GHz)
Gain and NF versus frequency
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp (f=10GHz)
Min Typ Max Unit
7 12 GHz
19 dB
1.2 dB
11 dBm
Ref. : DSCHA21102181 - 29 Jun 12
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page  
7-12GHz LNA
Test fixture Measurements
Tamb=+25°C, Vd = +4V, Id = 45mA
IP3 versus frequency
CHA2110-98F
Ref. : DSCHA21102181 - 29 Jun 12
5/10 Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CHA2110-98F.PDF ] | |
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