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United Monolithic Semiconductors - 71-86GHz Low Noise Amplifier

Numéro de référence CHA2080-98F
Description 71-86GHz Low Noise Amplifier
Fabricant United Monolithic Semiconductors 
Logo United Monolithic Semiconductors 





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CHA2080-98F fiche technique
CHA2080-98F
71-86GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2080-98F is a Low Noise Amplifier
with variable gain. This circuit integrates four
stages and provides 3.5dB Noise Figure
associated to 22dB Gain and +10dBm
Output Power at 1dB compression.
This amplifier is dedicated to
telecommunication, particularly well suited for
the two main E-Bands used in new
generation of High Capacity Backhaul.
It is manufactured with a pHEMT process,
0.1µm gate length, via holes through the
substrate, air bridges, electron beam gate
lithography and is available in chip form with
BCB Layer protection.
Functional diagram
Main Features
Broadband performances: 71-86GHz
Very low Noise Figure: 3.5dB
High Gain: 22dB
Dynamic Gain control: 12dB
10dBm Pout@1dB compression
BCB Layer protection
DC bias: Vd=3.5Volt@Id=75mA
Chip size 3.35x1.12x0.07mm
28
24
20
16
12
8
4
0
65 70 75 80 85
Frequency (GHz)
Typical Linear gain and Noise Figure
90
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB compression
Min Typ Max Unit
71 86 GHz
22 dB
3.5 dB
10 dBm
Ref. : DSCHA20802355 - 20 Dec 12
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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Télécharger [ CHA2080-98F ]


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