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CHA2069-FAA fiches techniques PDF

United Monolithic Semiconductors - 16-32GHz Low Noise Amplifier

Numéro de référence CHA2069-FAA
Description 16-32GHz Low Noise Amplifier
Fabricant United Monolithic Semiconductors 
Logo United Monolithic Semiconductors 





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CHA2069-FAA fiche technique
CHA2069-FAA
16-32GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA2069-FAA is a three-stage
self-biased wide band monolithic low noise
amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is proposed in leadless surface mount
hermetic metal ceramic 6x6mm² package.
The overall power supply is of 4.5V/55mA.
The circuit is dedicated to space applications
and also well suited for a wide range of
microwave and millimetre wave applications
and systems.
UMS
A2069
YYWW
Main Features
Broadband performance 16-32GHz
2.5dB typical Noise Figure
20dBm 3rd order intercept point
22dB gain
Low DC power consumption
6x6mm² metal ceramic hermetic package
30
25
20
15
10
5
0
10
+25 C
-40 C
+85 C
15 20 25 30
Frequency (GHz)
35
40
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range
16 32 GHz
NF Noise figure
2.5 dB
G Small signal Gain
22 dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA2069-FAA2356 - 21 Dec 12
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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