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Numéro de référence | WFW11N90 | ||
Description | N-Channel MOSFET | ||
Fabricant | Wisdom technologies | ||
Logo | |||
Wisdom Semiconductor
WFW11N90
Features
■ RDS(on) (Max 1.1 Ω )@VGS=10V
■ Gate Charge (Typical 70nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies.
N-Channel MOSFET
Symbol
1. Gate{
TO-247
{ 2. Drain
●
◀▲
●
●
{ 3. Source
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
900
11
6.6
44
±30
1280
30
4.0
300
2.38
- 55 ~ 150
300
Value
Typ.
-
0.24
-
Max.
0.42
-
40
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/2
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Pages | Pages 7 | ||
Télécharger | [ WFW11N90 ] |
No | Description détaillée | Fabricant |
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