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Wisdom technologies - N-Channel MOSFET

Numéro de référence WFN1N70
Description N-Channel MOSFET
Fabricant Wisdom technologies 
Logo Wisdom technologies 





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WFN1N70 fiche technique
PRELIMILARY
Wisdom Semiconductor
WFN1N70
N-Channel MOSFET
Features
RDS(on) (Max 14.0 )@VGS=10V
Gate Charge (Typical 5.0nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
TO-92
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJL
RθJA
Parameter
Thermal Resistance, Junction-to-Read
Thermal Resistance, Junction-to-Ambient
Min.
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
700
0.3
0.18
1.2
±30
54
0.25
5.5
2.5
0.02
- 55 ~ 150
300
Value
Typ.
-
-
Max.
50
140
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.

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