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PDF UTD36N03 Data sheet ( Hoja de datos )

Número de pieza UTD36N03
Descripción N-CHANNEL ENHANCEMENT MODE Power MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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No Preview Available ! UTD36N03 Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
UTD36N03
N-CHANNEL
ENHANCEMENT MODE
FEATURES
* RDS(ON) < 17m@VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTD36N03L-TA3-T
UTD36N03G-TA3-T
UTD36N03L-TN3-T
UTD36N03G-TN3-T
UTD36N03L-TN3-R
UTD36N03G-TN3-R
Package
TO-220
TO-252
TO-252
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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UTD36N03 pdf
UTD36N03
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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