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UT2N10 fiches techniques PDF

Unisonic Technologies - N-CHANNEL POWER MOSFET

Numéro de référence UT2N10
Description N-CHANNEL POWER MOSFET
Fabricant Unisonic Technologies 
Logo Unisonic Technologies 





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UT2N10 fiche technique
UNISONIC TECHNOLOGIES CO., LTD
UT2N10
2 Amps,100 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT2N10 is N-Channel enhancement mode silicon gate
power FET.it uses a special gate oxide designed to provide full rated
conductance at gate biases through 3V ~ 5V and facilitate true on-off
power control directly from logic circuit supply voltages.
The UTC UT2N10 is universally applied in logic level (5V) driving
sources, such as automotive switching, solenoid drivers and
programmable controllers.
FEATURES
* RDS(ON) < 1.050@ VGS=5V, ID=2A
* Design Optimized for 5V Gate Drives
* Can be Driven Directly from QMOS, NMOS, TTL Circuits
* Compatible with Automotive Drive Requirements
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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