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Numéro de référence | IPU60R1K5CE | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
IPD60R1K5CE,IPU60R1K5CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
DPAK
tab
2
1
3
IPAK
tab
12 3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
1500
mΩ
Id. 5
A
Qg.typ
9.4
nC
ID,pulse
8
A
Eoss@400V
1
µJ
Type/OrderingCode
IPD60R1K5CE
IPU60R1K5CE
Package
PG-TO 252
PG-TO 251
Marking
60S1K5CE
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31
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Pages | Pages 14 | ||
Télécharger | [ IPU60R1K5CE ] |
No | Description détaillée | Fabricant |
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