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IPD60R400CE fiches techniques PDF

Infineon Technologies - MOSFET ( Transistor )

Numéro de référence IPD60R400CE
Description MOSFET ( Transistor )
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPD60R400CE fiche technique
IPD60R400CE,IPS60R400CE,IPA60R400CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
DPAK
tab
2
1
3
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R400CEisFullPAKmarkingonly
IPAKSL
tab
PG-TO220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
400
m
Id. 14.7 A
Qg.typ
32
nC
ID,pulse
30
A
Eoss@400V
2.8
µJ
Type/OrderingCode
IPD60R400CE
IPS60R400CE
IPA60R400CE
Package
PG-TO 252
PG-TO 251
PG-TO 220 FullPAK
Marking
RelatedLinks
60S400CE / 6R400CE*
see Appendix A
Final Data Sheet
1 Rev.2.2,2016-08-08

PagesPages 17
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