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PDF 8PT Data sheet ( Hoja de datos )
| Número de pieza | 8PT | |
| Descripción | Sensitive and Standard SCRs | |
| Fabricantes | nELL | |
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SEMICONDUCTOR
8PT Series RRooHHSS
Sensitive and Standard SCRs, 8A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
8
600 to 1000
0.2 to 15
Unit
A
V
mA
DESCRIPTION
Available either in sensitive or standard gate
triggering levels, the 8A SCR series is suitable
to fit all modes of control found in applications
such as overvoltage crowbar protection, motor
control circuits in power tools and kitchen aids,
inrush current limiting circuits, capacitive
discharge ignition and voltage regulation circuits.
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space.
A
K
A
G
TO-251 (I-PAK)
(8PTxxF)
A
A
A
K
G
TO-252 (D-PAK)
(8PTxxG)
KAG
KA G
TO-220AB (Non-lnsulated)
(8PTxxA)
TO-220AB (lnsulated)
(8PTxxAI)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
IT(RMS)
IT(AV)
ITSM
I2t
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-251/TO-252/TO-220AB
TO-220AB insulated
F =50 Hz
F =60 Hz
tp = 10 ms
Tc=110°C
Tc=100°C
Tc=110°C
Tc=100°C
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
dI/dt
IGM
PG(AV)
Tstg
F = 60 Hz
Tp = 20 µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Operating junction temperature range
Tj
VALUE
8
5.1
95
100
45
50
4
1
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A2s
A/µs
A
W
ºC
www.nellsemi.com
Page 1 of 7
1 page  
SEMICONDUCTOR
8PT Series RRooHHSS
Fig.7 Relative variation of gate trigger and
holding current versus junction
temperature
2.4 IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.2
2.0 IGT
5mA & 15mA
1.8
1.6
1.4
1.2 lH& IL
1.0
0.8
0.6
0.4
0.2
0.0
Tj(°C)
-40 -20 0 20 40 60 80 100 120 140
Fig.9 Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values) for IG=200µA
10.00 dV/dt[RGK] / dV/dt[RGK=220Ω]
Tj=125°C
VD=0.67 X VDRM
1.00
0.10
0.01
0
RGK(KΩ)
200 400 600 800 1000 1200 1400 1600 1800 2000
Fig.11 Surge peak on-state current versus
number of cycles
ISTM(A)
100
90
80
70
60
50
40
30
20
10
0
1
Non repetitive
Tj initial=25°C
Repetitive
Tc=110°C
Number of cycles
10 100
tp=10ms
One cycle
1000
Fig.8 Relative variation of holding current
versus gate-cathode resistance
(typical values)
IH[RGK] / IH[RGK=1KΩ]
6.0
5.5 IGT=200µA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
1E-1
RGK(KΩ)
1E+0
Tj=25°C
1E+1
Fig.10 Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values) for IGT=200µA
dV/dt[CGK] / dV/dt[RGK=220Ω]
15.0
12.5
VD=0.67 X VDRM
Tj=125°C
RGK=220Ω
10.0
7.5
5.0
2.5
0.0 CGK(nF)
0 20 40 60 80 100 120 140 160 180 200 220
Fig.12 Non-repetitive surge peak on-state current
and corresponding values of l²t
ITSM(A),I²t(A²s)
1000
Tj inital=25°C
100
dI/dt Iimitation
Sinusoidal pulse with width tp< 10ms
ITSM
10
0.01
tp(ms)
0.10
I²t
1.00
10.00
www.nellsemi.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 8PT.PDF ] | |
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