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Numéro de référence | 25PT | ||
Description | Stansard SCRs | ||
Fabricant | nELL | ||
Logo | |||
1 Page
SEMICONDUCTOR
25PT Series RRooHHSS
Stansard SCRs, 25A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
25
600 to 1200
4 to 40
Unit
A
V
mA
A
K AG
K AG
TO-220AB (Non-lnsulated)
(25PTxxA)
TO-220AB (lnsulated)
(25PTxxAI)
DESCRIPTION
The 25PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A
KA
G
TO-263 (D2PAK)
(25PTxxH)
TO-220F (ITO-220AB)
(25PTxxAF)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
Average on-state current
(180° conduction angle)
IT(AV)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
ITSM
I2t
dI/dt
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
Tj
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated/TO-220F
TO-263/TO-220AB
TO-220AB insulated/TO-220F
F =50 Hz
F =60 Hz
tp = 10 ms
Tc=100°C
Tc=83°C
Tc=100°C
Tc=83°C
t = 20 ms
t = 16.7 ms
F = 60 Hz
Tj = 125ºC
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Tj =125ºC
VALUE
25
16
300
314
450
50
4
10
1
600 to 1200
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
www.nellsemi.com
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Pages | Pages 6 | ||
Télécharger | [ 25PT ] |
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