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PDF 16T Data sheet ( Hoja de datos )
| Número de pieza | 16T | |
| Descripción | TRIACs | |
| Fabricantes | nELL | |
| Logotipo |  |
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SEMICONDUCTOR
16T Series RRooHHSS
TRIACs, 16A
Snubberless, Logic Level and Standard
Features
● Medium current Triac
● Low thermal resistance with clip bonding
● Low thermal resistance insulation ceramic for
insulated 16T
● High commutation (4Q) or very high
commutation (3Q) capability
● RoHS compliant, UL certified (File NO:E320098)
● Insulated tab (16TxxAI series, rated at 2500 VRMS)
Applications
● Snubberless versions (With Suffix W) especially
recommended for use on inductive loads, because
of their high commutation performances
● On/off or phase angle function in applications such
as static relays, light dimmers and appliance motor
speed controllers
Description
Available either in through-hole or surface-mount
packages, the 16TxxA and 16TxxAl triacs series
are suitable for general purpose mains power AC
switcging
A2
A1
A2
G
TO-220AB (non-Insulated)
(16TxxA)
12 3
TO-220AB (lnsulated)
(16TxxAI)
A2
A1 A2
G
TO-263 (D2PAK)
(16TxxH)
TO-220F (ITO-220AB)
(16TxxAF)
2(A2)
3(G)
1(A1)
SYMBOL
IT(RMS)
VDRM/VRRM
IGT(Q1)
VALUE
16
600 to 1000
5 to 50
UNIT
A
V
mA
Device summary
SYMBOL
lT(RMS)
VDRM/VRRM
IGT(Snubberless)
IGT(Logic level)
IGT(Standard)
Note 1: Insulated
PARAMETER
On-state RMS current
Repetitive peak off-state voltage
Triggering gate current
Triggering gate current
Triggering gate current
16TxxAI(1)
16
600/800/1000
35/50
10
25/50
16TxxA
16
600/800/1000
35/50
10
25/50
www.nellsemi.com
Page 1 of 7
1 page  
SEMICONDUCTOR
16T Series RRooHHSS
Fig.5 On-state characteristics (maximum values)
I
200
100
(A)
Tj max.
Vto = 0.85 V
Rd = 25 mΩ
Tj=Tj max
10
Tj=25°C
VTM(V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig.6 surge peak on- state current versus number
of cycles
ITSM(A)
180
160
140
120
Non repetitive
100 Tj initial=25°C
80
Repetitive
60 Tc=85°C
40
20
Number of cycles
0
1 10 100
t=20ms
One cycle
1000
Fig7. Non-repetitive surge peak on-state
current for a sinusoidal
ITSM(A), I²t(A²S)
3000
dI/dt limitation:
50A/µs
1000
Tj initial=25°C
ITSM
100
0.01
pulse with width tp<10ms and
corresponding value of l²t
0.10
l²t
1.00
10.00
Fig.8 Relative variation of gate trigger current
IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25°C]
2.5
2.0
1.5 IGT
1.0
0.5
0.0
-40
-20
IH & IL
0 20
Tj(°C)
40 60
80 100 120 140
Fig.9 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
2.0 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
1.8
SW
1.6
C
1.4 B
snubberless and Logic level types
1.2
CW/BW
1.0
0.8
0.6
0.4
0.1
1.0 10.0
(dV/dt)c (V/µs)
100.0
Fig.10 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [Tj] (dl/dt)c [Tj specified ]
6
5
4
3
2
1
Tj(°C)
0
0 25 50 75
standard types
100 125
www.nellsemi.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 16T.PDF ] | |
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