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IRFR825TRPbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFR825TRPbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFR825TRPbF fiche technique
PD - 96433A
IRFR825TRPbF
HEXFET® Power MOSFET
Applications
Zero Voltage Switching SMPS
Uninterruptible Power Supplies
Motor Control applications
VDSS RDS(on) typ. Trr typ. ID
500V 1.05Ω
92ns 6.0A
D
Features and Benefits
Fast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Higher Gate voltage threshold offers improved noise
immunity.
S
G
D-Pak
IRFR825TRPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
6.0
3.9
24
119
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
1.0
± 20
9.9
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
300 (1.6mm from case )
Min. Typ. Max. Units Conditions
––– ––– 6.0
MOSFET symbol
A showing the
D
––– ––– 24
––– ––– 1.2
integral reverse
G
fp-n junction diode.
S
V TJ = 25°C, IS = 6.0A, VGS = 0V
––– 92 138
––– 152 228
––– 167 251
––– 292 438
ns TJ = 25°C, IF = 6.0A
fTJ = 125°C, di/dt = 100A/μs
fnC TJ = 25°C, IS = 6.0A, VGS = 0V
fTJ = 125°C, di/dt = 100A/μs
––– 3.6 5.4
fTJ = 25°C, IS = 6.0A, VGS = 0V
A di/dt = 100A/μs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes  through ‡ are on page 2
www.irf.com
1
12/19/12

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