|
|
PDF K2461 Data sheet ( Hoja de datos )
| Número de pieza | K2461 | |
| Descripción | MOSFET ( Transistor ) - 2SK2461 | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K2461 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2461
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2461 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A)
RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A)
• Low Ciss Ciss = 1400 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
100 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±20 A
Drain Current (pulse)*
ID(pulse)
±80 A
Total Power Dissipation (Tc = 25 ˚C) PT1
35 W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
20 A
Single Avalanche Energy**
EAS
40 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
123
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
Document No. TC-2529
(O. D. No. TC-8078)
Date Published April 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
160
120
VGS = 4 V
80
VGS = 10 V
40
0 ID = 10 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
100
Ciss
Coss
Crss
10
1 10 100 1 000
VDS - Drain to Source Voltage - V
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
10
0.1
1.0 10
ID - Drain Current - A
100
2SK2461
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
4V
10
VGS = 0
1
0 1.0 2.0 3.0
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td(off)
tf
tr
td(on)
VDD = 50 V
VGS =10 V
RG =10 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 VDD = 80 V 16
ID = 20 A 14
60
VDS
12
VGS 10
40 8
6
20 4
2
0
0 20 40 60 80
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2461.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| k246 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| k246 | N-CHANNEL JUNCTION TYPE Field Effect Transistor |  Toshiba |
| k246 | Small switching (60V/ 2A) |  ROHM Semiconductor |
| k246 | Ultrahigh-Speed Switching Applications |  Sanyo Semicon Device |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |