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PDF IKZ75N65NH5 Data sheet ( Hoja de datos )
| Número de pieza | IKZ75N65NH5 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID2
fastandsoftantiparalleldiode
IKZ75N65NH5
650VDuoPackIGBTanddiode
Highspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
1 page  
IKZ75N65NH5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=75.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
VGE=0V,IF=75.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
IC=0.75mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=75.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.65 2.10
1.82 -
V
- 1.90 -
-
-
1.60 2.20
1.65 -
V
- 1.65 -
3.2 4.0 4.8 V
- - 75.0 µA
- 3300.0 -
- - 100 nA
- 104.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=75.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 4300 -
- 130 - pF
- 16 -
- 166.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=37.5A,
VGE=0.0/15.0V,
RG(on)=27.0Ω,RG(off)=22.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 52 - ns
- 19 - ns
- 412 - ns
- 19 - ns
- 0.88 - mJ
- 0.52 - mJ
- 1.40 - mJ
1) The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
5
Rev.2.1,2014-10-31
5 Page 
IKZ75N65NH5
Highspeedseriesfifthgeneration
1E+4
Cies
Coes
Cres
1000
100
D = 0.5
0.1 0.2
0.1
0.05
0.02
0.01
single pulse
0.01
10
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-6
i: 1 2 3 4 5 6
ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3
τi[s]: 2.8E-5 2.3E-4 2.3E-3 0.013145 0.113481 1.869237
1E-5
1E-4 0.001
0.01
tp,PULSEWIDTH[s]
0.1
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
80
Tvj = 25°C, IF = 37.5A
Tvj = 150°C, IF = 37.5A
70
60
50
40
30
20
i: 1 2 3 4 5 6 7
ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3
τi[s]: 1.0E-5 3.0E-5 2.2E-4 2.2E-3 0.01247 0.10291 1.85641
0.001
1E-6
1E-5
1E-4
0.001
0.01
tp,PULSEWIDTH[s]
0.1
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
10
0
1000
1500
2000
2500
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
11 Rev.2.1,2014-10-31
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IKZ75N65NH5.PDF ] | |
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