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PDF IDV30E65D2 Data sheet ( Hoja de datos )
| Número de pieza | IDV30E65D2 | |
| Descripción | Diode ( Rectifier ) | |
| Fabricantes | Infineon | |
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Diode
RapidSwitchingEmitterControlledDiode
IDV30E65D2
EmitterControlledDiode
Datasheet
IndustrialPowerControl
1 page  
EmitterControlledDiode
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
Diode reverse recovery time
Diode reverse recovery charge
trr
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=125°C,
VR=400V,
IF=30.0A,
diF/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
IDV30E65D2
min.
Value
typ.
max. Unit
- 42 - ns
- 0.34 - µC
- 14.7 - A
- -2100 - A/µs
- 70 - ns
- 0.25 - µC
- 5.7 - A
- -700 - A/µs
Value
Unit
min. typ. max.
- 56 - ns
- 0.61 - µC
- 18.0 - A
- -2200 - A/µs
- 73 - ns
- 0.38 - µC
- 7.1 - A
- -900 - A/µs
5 Rev.2.1,2014-09-18
5 Page 
Emitter Controlled Diode
IDV30E65D2
Revision History
IDV30E65D2
Revision: 2014-09-18, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1 2014-09-18 Final data sheet
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
11 Rev. 2.1, 2014-09-18
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IDV30E65D2.PDF ] | |
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