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Numéro de référence | 4N65-E | ||
Description | N-CHANNEL POWER MOSFET | ||
Fabricant | Unisonic Technologies | ||
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UNISONIC TECHNOLOGIES CO., LTD
4N65-E
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65-E is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristic. This power MOSFET is usually
used in high speed switching applications including power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
FEATURES
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-964.E
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Pages | Pages 7 | ||
Télécharger | [ 4N65-E ] |
No | Description détaillée | Fabricant |
4N65-C | N-CHANNEL POWER MOSFET | Unisonic Technologies |
4N65-E | N-CHANNEL POWER MOSFET | Unisonic Technologies |
4N65-N | N-CHANNEL POWER MOSFET | Unisonic Technologies |
4N65-Q | N-CHANNEL POWER MOSFET | Unisonic Technologies |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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