DataSheetWiki


4N60-N fiches techniques PDF

Unisonic Technologies - N-CHANNEL POWER MOSFET

Numéro de référence 4N60-N
Description N-CHANNEL POWER MOSFET
Fabricant Unisonic Technologies 
Logo Unisonic Technologies 





1 Page

No Preview Available !





4N60-N fiche technique
UNISONIC TECHNOLOGIES CO., LTD
4N60-N
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N60-N is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
FEATURES
* RDS(ON) < 2.5@ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high RuggednessA
SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-971.B

PagesPages 8
Télécharger [ 4N60-N ]


Fiche technique recommandé

No Description détaillée Fabricant
4N60-C N-CHANNEL POWER MOSFET Unisonic Technologies
Unisonic Technologies
4N60-E N-CHANNEL POWER MOSFET Unisonic Technologies
Unisonic Technologies
4N60-N N-CHANNEL POWER MOSFET Unisonic Technologies
Unisonic Technologies
4N60-Q N-CHANNEL POWER MOSFET Unisonic Technologies
Unisonic Technologies

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche