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CEL - NPN SILICON HIGH FREQUENCY TRANSISTOR

Numéro de référence NE68018
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Fabricant CEL 
Logo CEL 





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NE68018 fiche technique
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
LOW NOISE FIGURE:
1.7 dB at 2 GHz
2.6 dB at 4 GHz
HIGH ASSOCIATED GAIN:
12.5 dB at 2 GHz
8.0 dB at 4 GHz
EXCELLENT LOW VOLTAGE
LOW CURRENT PERFORMANCE
DESCRIPTION
The NE680 series of NPN epitaxial silicon transistors is
designed for low noise, high gain and low cost applications.
Both the chip and micro-x versions are suitable for applications
up to 6 GHz. The NE680 die is also available in six different low
cost plastic surface mount package styles. The NE680's high
fT makes it ideal for low voltage/low current applications, down
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
35 mA. For higher current applications see the NE681 series.
00 (CHIP)
18 (SOT 343 STYLE)
35 (MICRO-X)
19 (3 PIN ULTRA
SUPER MINI MOLD)
NE68018
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
6V, 5 m A
3V, 5 mA
25
20
15
2.5 10
2.0 5
1.5
1.0
.5
300 500
1000
2000
3000
Frequency, f (GHz)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories

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