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PDF BFG520XR Data sheet ( Hoja de datos )
| Número de pieza | BFG520XR | |
| Descripción | NPN 9 GHz wideband transistor | |
| Fabricantes | Philips | |
| Logotipo |  |
|
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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
1 page  
Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG520; BFG520/X; BFG520/XR
400
handbook, halfpage
Ptot
(mW)
300
MRA670-1
200
100
0
0 50 100 150 200
Ts (oC)
Fig.3 Power derating curve.
250
handbook, halfpage
hFE
200
MRA671
150
100
50
0
10−2
10−1
1
10 102
IC (mA)
VCE = 6 V; Tj = 25 °C.
Fig.4 DC current gain as a function of collector
current.
0.6
handbook, halfpage
Cre
(pF)
0.4
0.2
MRA672
12
handbook, halfpage
fT
(GHz)
8
4
MRA673
VCE = 6 V
VCE = 3 V
0
0 4 8 12
VCB (V)
IC = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
September 1995
0
10−1
1
10 102
IC (mA)
f = 1 GHz; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current.
5
5 Page 
Philips Semiconductors
NPN 9 GHz wideband transistor
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
Product specification
BFG520; BFG520/X; BFG520/XR
SOT143B
DB
E AX
y
e
4
1
b1
e1
vM A
HE
bp w M B
3
2
A
A1
Q
c
Lp
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
vw
y
mm
1.1
0.9
0.1 0.48 0.88 0.15 3.0
0.38 0.78 0.09 2.8
1.4
1.2
1.9 1.7
2.5 0.45 0.55
2.1 0.15 0.45
0.2
0.1
0.1
OUTLINE
VERSION
SOT143B
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
September 1995
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BFG520XR.PDF ] | |
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