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NXP Semiconductors - Zero voltage switching resonant converter controller

Numéro de référence TEA1611T
Description Zero voltage switching resonant converter controller
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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TEA1611T fiche technique
TEA1611T
Zero voltage switching resonant converter controller
Rev. 01 — 7 September 2009
Product data sheet
1. General description
The TEA1611T is a monolithic integrated circuit implemented in a high voltage Diffusion
Metal Oxide Semiconductor (DMOS) process, which is a high voltage controller for a zero
voltage switching resonant converter. The IC provides the drive function for two discrete
power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an
oscillator with accurately programmable frequency range, a latched shut-down function
and a transconductance error amplifier.
To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through
a divide-by-two flip-flop before being fed to the output drivers.
The circuit is very flexible and enables a broad range of applications for different mains
voltages.
VAUX
TEA1611
Vhs
bridge voltage
supply
(high side)
MOSFET
SWITCH
HALF-
BRIDGE
CIRCUIT
RESONANT
CONVERTER
signal ground
Fig 1. Basic configuration
power ground
014aaa681
2. Features
I Integrated high voltage level-shift function
I Integrated high voltage bootstrap diode
I Low start-up current (green function)
I Adjustable non-overlap time
I Internal OverTemperature Protection (OTP)
I OverCurrent Protection (OCP) that activates a shut-down timer

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