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BLF8G38LS-75V fiches techniques PDF

NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLF8G38LS-75V
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLF8G38LS-75V fiche technique
BLF8G38LS-75V
Power LDMOS transistor
Rev. 3 — 1 July 2014
Product data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 3400 MHz to 3800 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
1-carrier W-CDMA
3400 to 3800
600 30 20
15.5 26 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth
Designed for broadband operation (3400 MHz to 3800 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
3400 MHz to 3800 MHz frequency range

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