|
|
PDF BLF8G27LS-140V Data sheet ( Hoja de datos )
| Número de pieza | BLF8G27LS-140V | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BLF8G27LS-140V (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
BLF8G27LS-140V
Power LDMOS transistor
Rev. 3 — 1 May 2015
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2600 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2600 to 2700
1300 32 45
17.4 30 32 [1]
2-carrier W-CDMA
2600 to 2700
1300 28 35
17.0 29 33 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (100 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
2600 MHz to 2700 MHz frequency range
1 page  
NXP Semiconductors
BLF8G27LS-140V
Power LDMOS transistor
Table 10. List of components …continued
For test circuit see Figure 2.
Component
Description
C11, C12
multilayer ceramic chip capacitor
C15 electrolytic capacitor
R1 chip resistor
Value
4.7 F, 50 V
470 F, 63 V
3.9
Remarks
[2] Murata
Philips SMD 1206
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] Murata or capacitor of same quality.
8.5 Graphical data
8.5.1 CW pulse
*S
G%
*S
DDD
Ș'
5/LQ
G%
DDD
Ș'
3/ G%P
3/ G%P
VDS = 32 V; IDq = 1300 mA; tp = 100 s; = 10 %.
(1) f = 2620 MHz
(2) f = 2655 MHz
(3) f = 2690 MHz
Fig 3. Power gain and drain efficiency as function of
load power; typical values
VDS = 32 V; IDq = 1300 mA; tp = 100 s; = 10 %.
(1) f = 2620 MHz
(2) f = 2655 MHz
(3) f = 2690 MHz
Fig 4. Input return loss as a function of load power;
typical values
BLF8G27LS-140V
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLF8G27LS-140V
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF8G27LS-140V
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BLF8G27LS-140V.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BLF8G27LS-140V | Power LDMOS transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |