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Numéro de référence | BLF882 | ||
Description | UHF power LDMOS transistor | ||
Fabricant | NXP Semiconductors | ||
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1 Page
BLF882; BLF882S
UHF power LDMOS transistor
Rev. 2 — 3 July 2015
Product data sheet
1. Product profile
1.1 General description
A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 200 W in broadband applications from HF to
860 MHz. The excellent ruggedness and broadband performance of this device makes it
ideal for digital transmitter applications.
Table 1. Test information
RF performance at Tcase = 25 C in a class-AB test circuit.
Test signal
f VDS PL(AV)
(MHz)
(V) (W)
Gp D
(dB) (%)
RF performance in a class-AB 705 MHz narrowband test circuit
CW, class-AB
705
50 180
21 62
CW pulsed, class-AB
705
50 200
21 63
RF performance in a class-AB 470 MHz to 705 MHz broadband test circuit
DVB-T (8k OFDM)
470 to 705 50 33
20 28 to 31
PAR
(dB)
-
-
8.0 to 8.4 [1]
[1] PAR of output signal at 0.01% probability on CCDF; PAR of input signal = 9.5 dB at 0.01% probability on
CCDF.
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
Transmitter applications in the HF to 860 MHz frequency range
Industrial applications in the HF to 860 MHz frequency range
Broadcast transmitters
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Pages | Pages 12 | ||
Télécharger | [ BLF882 ] |
No | Description détaillée | Fabricant |
BLF881 | UHF Power LDMOS Transistor | NXP Semiconductors |
BLF881S | UHF Power LDMOS Transistor | NXP Semiconductors |
BLF882 | UHF power LDMOS transistor | NXP Semiconductors |
BLF882S | UHF power LDMOS transistor | NXP Semiconductors |
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