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PDF BLF871S Data sheet ( Hoja de datos )
| Número de pieza | BLF871S | |
| Descripción | UHF power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF871; BLF871S
UHF power LDMOS transistor
Rev. 04 — 19 November 2009
Product data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1. Typical performance
RF performance at VDS = 40 V in a common-source 860 MHz test circuit.
Mode of operation f
PL PL(PEP) PL(AV) Gp
ηD IMD3
(MHz)
(W) (W)
(W) (dB) (%) (dBc)
CW, class AB
860
100 -
- 21 60 -
2-tone, class AB
f1 = 860; f2 = 860.1 - 100
-
21 47 −35
DVB-T (8k OFDM) 858
--
24 22 33 −34[1]
PAR
(dB)
-
-
8.3[2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent
drain current IDq = 0.5 A:
Peak envelope power load power = 100 W
Power gain = 21 dB
Drain efficiency = 47 %
Third order intermodulation distortion = −35 dBc
DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent
drain current IDq = 0.5 A:
Average output power = 24 W
Power gain = 22 dB
Drain efficiency = 33 %
Third order intermodulation distortion = −34 dBc (4.3 MHz from center frequency)
1 page  
NXP Semiconductors
7.1 Narrowband RF figures
7.1.1 CW
24
Gp
(dB)
22
20
Gp
ηD
BLF871; BLF871S
UHF power LDMOS transistor
001aaj277
80
ηD
(%)
60
40
18 20
16
0
0
60 120 180
PL (W)
VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit.
Fig 2. CW power gain and drain efficiency as a function of load power; typical values
7.1.2 2-Tone
25
Gp
(dB)
23
21
19
Gp
ηD
001aaj278
80
ηD
(%)
60
40
20
0
IMD3
(dBc)
−20
−40
001aaj279
(1)
(2)
17
0
0
40 80 120
PL(AV) (W)
VDS = 40 V; IDq = 0.5 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 3.
2-Tone power gain and drain efficiency as
functions of average load power; typical
values
−60
0
40 80 120
PL(AV) (W)
VDS = 40 V; IDq = 0.5 A; measured in a common source
narrowband 860 MHz test circuit.
(1) Low frequency component
(2) High frequency component
Fig 4.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
BLF871_BLF871S_4
Product data sheet
Rev. 04 — 19 November 2009
© NXP B.V. 2010. All rights reserved.
5 of 19
5 Page 
NXP Semiconductors
BLF871; BLF871S
UHF power LDMOS transistor
8. Test information
Table 9. List of components
For test circuit, see Figure 14, Figure 15 and Figure 16.
Component
Description
C1, C2
multilayer ceramic chip capacitor
C3, C4
multilayer ceramic chip capacitor
C5 multilayer ceramic chip capacitor
C6 multilayer ceramic chip capacitor
C7 multilayer ceramic chip capacitor
C8, C9, C10, C25, multilayer ceramic chip capacitor
C26
C11, C27
multilayer ceramic chip capacitor
C12 electrolytic capacitor
C20 multilayer ceramic chip capacitor
C21 multilayer ceramic chip capacitor
C22 trimmer
C23 multilayer ceramic chip capacitor
C24 multilayer ceramic chip capacitor
L1 stripline
L2 stripline
L3 stripline
L4 stripline
L5 stripline
L6 stripline
L7 stripline
L20 stripline
L21 stripline
L22 stripline
L23 stripline
R1 resistor
R2 resistor
Value
5.1 pF
10 pF
6.8 pF
4.7 pF
2.7 pF
100 pF
Remarks
[1]
[2]
[1]
[1]
[1]
[1]
10 μF
470 μF; 63 V
10 pF
8.2 pF
0.6 pF to 4.5 pF
6.8 pF
3.9 pF
-
-
-
-
-
-
-
-
-
-
-
100 Ω
10 kΩ
TDK C570X7R1H106KT000N or
capacitor of same quality.
[3]
[3]
Tekelec
[3]
[3]
[4] (W × L) 7 mm × 15 mm
[4] (W × L) 2.4 mm × 9 mm
[4] (W × L) 2.4 mm × 10 mm
[4] (W × L) 2.4 mm × 25 mm
[4] (W × L) 2.4 mm × 10 mm
[4] (W × L) 2.0 mm × 20 mm
[4] (W × L) 2.0 mm × 21 mm
[4] (W × L) 7 mm × 12 mm
[4] (W × L) 2.4 mm × 13 mm
[4] (W × L) 2.4 mm × 31 mm
[4] (W × L) 2.4 mm × 5 mm
[1] American technical ceramics type 100B or capacitor of same quality.
[2] American technical ceramics type 180R or capacitor of same quality.
[3] American technical ceramics type 100A or capacitor of same quality.
[4] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 μm.
BLF871_BLF871S_4
Product data sheet
Rev. 04 — 19 November 2009
© NXP B.V. 2010. All rights reserved.
11 of 19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet BLF871S.PDF ] | |
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