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PDF BLF640 Data sheet ( Hoja de datos )
| Número de pieza | BLF640 | |
| Descripción | Broadband power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF640
Broadband power LDMOS transistor
Rev. 2 — 11 April 2013
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz
Table 1. Typical performance
IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
2-carrier W-CDMA 2110 to 2170 28
0.7 18.5 15
1-carrier W-CDMA 2110 to 2170 28
2
19.3 31
ACPR
(dBc)
50 [1]
39 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
No internal matching for broadband operation
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for applications in the HF to 2200 MHz frequency range
Broadcast drivers
1 page  
NXP Semiconductors
BLF640
Broadband power LDMOS transistor
7.2.2 1-Carrier W-CDMA
50
RLin
(dB)
40
30
001aal123
(1)
20
(2)
(3)
10
0
01234
PL (W)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 4. Input return loss as a function of load power; typical values
20.0
Gp
(dB)
19.6
19.2
18.8
18.4
001aal124
(1)
(2)
(3)
50
ηD
(%)
40
30
20
10
001aal125
(1)
(2)
(3)
18.0
01234
PL (W)
0
01234
PL (W)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 5. Power gain as a function of load power; typical
values
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 6. Drain efficiency as a function of load power;
typical values
BLF640
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 April 2013
© NXP B.V. 2013. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLF640
Broadband power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF640
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 April 2013
© NXP B.V. 2013. All rights reserved.
11 of 12
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| Páginas | Total 12 Páginas | |
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