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PDF BLF25M612G Data sheet ( Hoja de datos )
| Número de pieza | BLF25M612G | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF25M612; BLF25M612G
Power LDMOS transistor
Rev. 3 — 16 December 2014
Product data sheet
1. Product profile
1.1 General description
12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF25M612 and BLF25M612G are drivers designed for high power CW applications
and is assembled in a high performance ceramic package.
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
(MHz)
(V) (W)
(dB)
CW
2450
28 12
19
D
(%)
60
1.2 Features and benefits
High efficiency
High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications in the frequency range 2400 MHz to
2500 MHz (this product is qualified according to the solid state cooking profile)
1 page  
NXP Semiconductors
BLF25M612; BLF25M612G
Power LDMOS transistor
*S
G%
Table 9. List of components
For test circuit see Figure 2.
Component
Description
C1, C2, C3, C4
multilayer ceramic chip capacitor
C5, C6
multilayer ceramic chip capacitor
C7, C8
multilayer ceramic chip capacitor
C9 electrolytic capacitor
R1 SMD resistor
7.4 Graphical data
Value
15 pF
220 nF
4.7 F, 50 V
100 F, 63 V
7.5
Remarks
ATC100A
SMD 1206
SMD 0805
DDD
Ș'
*S
G%
DDD
Ș'
3/ G%P
3/ :
VDS = 28 V; IDq = 10 mA.
(1) Gp at f = 2400 MHz
(2) Gp at f = 2450 MHz
(3) Gp at f = 2500 MHz
(4) D at f = 2400 MHz
(5) D at f = 2450 MHz
(6) D at f = 2500 MHz
Fig 3. Power gain and drain efficiency as function of
load power; typical values
VDS = 28 V; IDq = 10 mA.
(1) Gp at f = 2400 MHz
(2) Gp at f = 2450 MHz
(3) Gp at f = 2500 MHz
(4) D at f = 2400 MHz
(5) D at f = 2450 MHz
(6) D at f = 2500 MHz
Fig 4. Power gain and drain efficiency as function of
load power; typical values
BLF25M612_BLF25M612G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 16 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
BLF25M612; BLF25M612G
Power LDMOS transistor
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Handling information. . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 December 2014
Document identifier: BLF25M612_BLF25M612G
11 Page | ||
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Hoja de datos destacado
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| BLF25M612G | Power LDMOS transistor | NXP Semiconductors |
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