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NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLF188XRS
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLF188XRS fiche technique
BLF188XR; BLF188XRS
Power LDMOS transistor
Rev. 5 — 12 November 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
CW 2 to 30
27
41
60
72.5
81.4
88 to 108
108
200
pulsed RF
81.4
81.4
108
DVB-T
174 to 230
VDS
PL
(V) (W)
50 1270
50 1400
50 1200
48 1240
50 1350
50 1200
50 1320
50 1200
50 1288
50 1200
50 1400
50 1400
50 225
Gp
(dB)
29.0
23.7
22.0
22.0
23.1
27.1
22.5
26.5
19.3
25.8
25.4
24.0
23.8
D
(%)
75
73
82
77
83
77.8
85
83
68.3
85
81
73
29
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

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