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NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLF178XR
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLF178XR fiche technique
BLF178XR; BLF178XRS
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 128 MHz band.
Table 1. Application information
Test signal
CW
pulsed RF
f
(MHz)
108
108
VDS
PL
(V) (W)
50 1200
50 1400
Gp
(dB)
23
28
D
(%)
80
72
1.2 Features and benefits
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 s with of 20 %:
Output power = 1400 W
Power gain = 28 dB
Efficiency = 72 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 128 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

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