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PDF BLF10M6LS135 Data sheet ( Hoja de datos )
| Número de pieza | BLF10M6LS135 | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF10M6135; BLF10M6LS135
Power LDMOS transistor
Rev. 1 — 24 June 2014
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to
1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 26.5
21.0 28.0
ACPR
(dBc)
39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range
1 page  
NXP Semiconductors
BLF10M6135; BLF10M6LS135
Power LDMOS transistor
Table 9. List of components
See Figure 1 and Figure 2.
Component
Description
Value
Remarks
C1, C3, C10, C14, C17 multilayer ceramic chip capacitor 68 pF
[1] solder vertically
C2, C4, C5
multilayer ceramic chip capacitor 8.2 pF
[1] solder vertically
C6, C7
multilayer ceramic chip capacitor 10 pF
[1] solder vertically
C8, C9, C12, C13
electrolytic capacitor
100 nF
Vishay or capacitor
of same quality
C11, C15
multilayer ceramic chip capacitor 4.7 F, 50 V [2]
C16
multilayer ceramic chip capacitor 3.0 pF
[1] solder vertically
C18, C19, C20
electrolytic capacitor
220 F, 63 V
L1 ferrite SMD bead
Ferroxcube BDS
3/3/4.6-4S2 or
equivalent
Q1 BLF10M6135
R1, R2, R3
SMD resistor
9.1 , 0.1 W
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] TDK or capacitor of same quality.
7.3 Graphical data
7.3.1 1-Tone CW
24
Gp
(dB)
23
001aah864
75
ηD
(%)
60
22 Gp
21
ηD
20
45
30
15
19
0
0
40 80 120 160
PL (W)
VDS = 28 V; IDq = 950 mA; f = 881 MHz.
Fig 3. Power gain and drain efficiency as function of output power; typical values
BLF10M6135_BLF10M6LS135
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLF10M6135; BLF10M6LS135
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF10M6135_BLF10M6LS135
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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