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NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLF10H6600P
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLF10H6600P fiche technique
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
Rev. 2 — 20 June 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
Test signal
f
(MHz)
PL(AV)
(W)
PL(M)
(W)
Gp D IMD3
(dB) (%) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
pulsed, class-AB
f1 = 860; f2 = 860.1
860
250 -
20.8 46 32
- 600 19.8 58 -
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (400 MHz to 1000 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications
Industrial applications

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