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Numéro de référence | VN0610LL | ||
Description | FET Transistor | ||
Fabricant | ON Semiconductor | ||
Logo | |||
1 Page
VN0610LL
FET Transistor
N−Channel — Enhancement
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Drain −Gate Voltage (RGS = 1 MΩ)
Gate −Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 μs)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature
Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to
Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16” from case
for 10 seconds
Symbol
VDSS
VDGR
Value
60
60
Unit
Vdc
Vdc
VGS
VGSM
ID
IDM
PD
TJ, Tstg
± 20
± 40
190
1000
400
3.2
−55 to +150
Vdc
Vpk
mAdc
mW
mW/°C
°C
Symbol
RθJA
TL
Max
312.5
300
Unit
°C/W
°C
http://onsemi.com
1
23
CASE 29−11, STYLE 22
TO−92 (TO−226AA)
3 DRAIN
2
GATE
1 SOURCE
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number:
VN0610LL/D
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Pages | Pages 4 | ||
Télécharger | [ VN0610LL ] |
No | Description détaillée | Fabricant |
VN0610L | N-Channel Enhancement-Mode MOS Transistors | Vishay Telefunken |
VN0610LL | TMOS FET Transistor | Motorola Semiconductors |
VN0610LL | N-Channel Enhancement-Mode MOS Transistors | Calogic LLC |
VN0610LL | N-Channel 60-V (D-S) MOSFETs | Vishay Siliconix |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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