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SCH2809 fiches techniques PDF

ON Semiconductor - P-Channel Silicon MOSFET

Numéro de référence SCH2809
Description P-Channel Silicon MOSFET
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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SCH2809 fiche technique
SCH2809
Ordering number : ENA0446
SCH2809
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Features
Applications
Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained
in one package facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QJ
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--12
±10
--1.2
--4.8 A
0.6
150
--55 to +125
V
V
A
W
°C
°C
15
15
0.5
3
--55 to +125
--55 to +125
V
V
A
A
°C
°C
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn6seImwiw.cwo.omnsemi.com
Publication Order Number:
SCH2809/D

PagesPages 6
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