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Numéro de référence | SCH2809 | ||
Description | P-Channel Silicon MOSFET | ||
Fabricant | ON Semiconductor | ||
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1 Page
SCH2809
Ordering number : ENA0446
SCH2809
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Features
Applications
• Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained
in one package facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QJ
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--12
±10
--1.2
--4.8 A
0.6
150
--55 to +125
V
V
A
W
°C
°C
15
15
0.5
3
--55 to +125
--55 to +125
V
V
A
A
°C
°C
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn6seImwiw.cwo.omnsemi.com
Publication Order Number:
SCH2809/D
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Pages | Pages 6 | ||
Télécharger | [ SCH2809 ] |
No | Description détaillée | Fabricant |
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