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ON Semiconductor - High Current Surface Mount PNP Silicon Switching Transistor

Numéro de référence NSL5TT1
Description High Current Surface Mount PNP Silicon Switching Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NSL5TT1 fiche technique
NSL5TT1
Advance Information
High Current Surface
Mount PNP Silicon
Switching Transistor for
Load Management in
Portable Applications
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Peak
Collector Current Continuous
VCEO
VCBO
VEBO
IC
5.0
10
4.0
1.0
0.5
Vdc
Vdc
Vdc
Adc
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1.)
210 mW
1.7 mW/°C
Thermal Resistance,
Junction to Ambient
RθJA (Note 1.)
595
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2.)
365 mW
2.9 mW/°C
Thermal Resistance,
Junction to Ambient
RθJA (Note 2.)
340
°C/W
Thermal Resistance,
Junction to Lead #3
RθJL
205 °C/W
Junction and Storage
Temperature Range
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 X 1.0 inch Pad
TJ, Tstg
55 to
+150
°C
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
http://onsemi.com
5 VOLTS
1.0 AMPS
PNP TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT416/SC75
STYLE 1
DEVICE MARKING
L3
ORDERING INFORMATION
Device
Package
Shipping
NSL5TT1
SOT416 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
NSL5TT1/D

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