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Numéro de référence | L2SB882Q | ||
Description | PNP SURFACE MOUNT TRANSISTOR | ||
Fabricant | Leshan Radio Company | ||
Logo | |||
LESHAN RADIO COMPANY, LTD.
PNPSURFACEMOUNTTRANSISTOR
ƽ We declare that the material of product compliance with RoHS requirements.
L2SB882Q
L2SB882P
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SB882Q
82Q 2500/Tape&Reel
L2SB882P
82P 2500/Tape&Reel
MAXIMUM RATINGS(Ta=25qC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak Pulse Current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICM
PC
Tj
Tstg
Limits
40
30
6
3
0.5
150
−55 to 150
Unit
V
V
V
A
W
°C
°C
1
2
3
4
SOT-89
1
BASE
2,4
COLLECTOR
3
EMITTER
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
ICBO
40
30
6
−
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
ICEO
IEBO
VCE(sat)
VBE(sat)
hFE(1)
−
−
−
−
100
DC current transfer ratio
hFE 32
Transition frequency
fT 50
Typ.
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
1
10
1
0.5
1.5
320
−
−
Unit
V
V
V
µA
µA
µA
V
V
−
−
MHz
Conditions
IC= 100µA
IC= 10mA
IE= 100µA
VCB= 40V
VCB= 30V
VEB= 6V
IC/IB= 2A/ 0.2A
IC/IB= 2A/ 0.2A
VCE= 2V, IC= 1A
VCE= 2V, IC= 100mA
VCE= 5V, I E=0.1A, f =10MHz
hFE(1) values are classified as follows :
Item(*)
Q
hFE 100~200
P
160~320
Rev.O 1/2
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Pages | Pages 2 | ||
Télécharger | [ L2SB882Q ] |
No | Description détaillée | Fabricant |
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