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Número de pieza | NTNS3193NZ | |
Descripción | Small Signal MOSFET | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTNS3193NZ
Small Signal MOSFET
20 V, 224 mA, Single N−Channel,
0.62 x 0.62 x 0.4 mm XLLGA3 Package
Features
• Single N−Channel MOSFET
• Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm)
• Low RDS(on) Solution in 0.62 x 0.62 mm Package
• 1.5 V Gate Voltage Rating
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Small Signal Load Switch
• Analog Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20 V
±8.0 V
224 mA
162
241
120 mW
t ≤ 5 s TA = 25°C
139
Pulsed Drain Current
tp = 10 ms
IDM
673 mA
Operating Junction and Storage
Temperature
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode)
IS 120 mA
Lead Temperature for Soldering Purposes TL 260 °C
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction-to-Ambient – Steady State (Note 1)
RθJA
1040 °C/W
Junction-to-Ambient – t ≤ 5 s (Note 1)
RθJA
900
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm2), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
http://onsemi.com
V(BR)DSS
20 V
MOSFET
RDS(on) MAX
1.4 W @ 4.5 V
1.9 W @ 2.5 V
2.2 W @ 1.8 V
4.3 W @ 1.5 V
ID MAX
224 mA
N−Channel MOSFET
D (3)
G (1)
S (2)
MARKING
DIAGRAM
3
2
1
XLLGA3
CASE 713AB
1
AM
A = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
NTNS3193NZT5G
Package
XLLGA3
(Pb−Free)
Shipping†
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 1
1
Publication Order Number:
NTNS3193NZ/D
1 page NTNS3193NZ
TYPICAL CHARACTERISTICS
1200
1100
1000
900
800
700
600 Duty Cycle = 0.5
500
400
300 0.20
200 0.10
100
0
1E−06
0.05
1E−05
0.02
1E−04
RqJA Steady State = 1040°C/W
0.01
Single Pulse
1E−03
1E−02
1E−01
1E+00
t, TIME (s)
Figure 13. FET Thermal Response
1E+01
1E+02 1E+03
MINIMUM RECOMMENDED
SOLDER FOOTPRINT*
2X
0.20
2X
0.20
0.35
PITCH
1
2
0.60
3
0.28
0.62
DIMENSIONS: MILLIMETERS
*Dependent upon end user capabilities, this footprint could be used as a minimum.
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTNS3193NZ.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTNS3193NZ | Small Signal MOSFET | ON Semiconductor |
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