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NCE Power Semiconductor - NCE N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE5558K
Description NCE N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE5558K fiche technique
http://www.ncepower.com
Pb Free Product
NCE5558K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE5558K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =55V,ID =58A
RDS(ON) < 13m@ VGS=10V
(Typ:10.5m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Schematic diagram
Application
Synchronous rectifiers for, industrial power supplies
LED backlighting
Marking and pin assignment
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE5558K
NCE5558K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
55
±20
58
41
100
80
0.64
-55 To 150
Unit
V
V
A
A
A
W
W/
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.6 /W
Wuxi NCE Power Semiconductor Co., Ltd
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