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NCE Power Semiconductor - N and P-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE4503S
Description N and P-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE4503S fiche technique
http://www.ncepower.com
Pb Free Product
NCE4503S
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE4503S uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . The SOP-8 package
is universally preferred for all commercial industrial
surface mount applications and suited for low voltage
applications such as DC/DC converters.
General Features
N-Channel
VDS = 30V,ID =10A
RDS(ON) < 20m@ VGS=4.5V
RDS(ON) < 13.5m@ VGS=10V
P-Channel
VDS = -30V,ID = -9.1A
RDS(ON) < 35m@ VGS=-4.5V
RDS(ON) < 20m@ VGS=-10V
N-channel
P-channel
Schematic diagram
High power and current handing capability
Lead free product is acquired
Surface mount package
Marking and pin assignment
Application
Battery protection
Load switch
Power management
SOP-8 top view
Package Marking and Ordering Information
Device Marking Device Device Package
4503
NCE4503S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current (Note 1)
TA=25
TA=70
10
ID
7.9
IDM 30
Maximum Power Dissipation
TA=25
PD 2.5
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
P-Channel
-30
±20
-9.1
-7.2
-30
2.5
-55 To 150
Unit
V
V
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
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