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NCE Power Semiconductor - NCE N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE3404Y
Description NCE N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE3404Y fiche technique
http://www.ncepower.com
Pb Free Product
NCE3404Y
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3404Y uses advanced trench technology to provide
excellent RDS(ON) and low gate charge.This device is suitable
for use as a load switch and PWM applications.
Genera Features
VDS = 30V,ID = 5.8A
RDS(ON) < 28m@ VGS=10V
RDS(ON) < 40m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface mount package
D
G
S
Schematic diagram
Application
Load switch
PWM application
Marking and pin assignment
SOT-23-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3404Y
NCE3404Y
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
5.8
20
1.4
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
89 /W
Min Typ Max Unit
30 33
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
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