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PDF NCE0213 Data sheet ( Hoja de datos )
| Número de pieza | NCE0213 | |
| Descripción | NCE N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
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http://www.ncepower.com
Pb Free Product
NCE0213
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0213 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 200V,ID =13A
RDS(ON) <140mΩ @ VGS=10V
(Typ:123mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Schematic diagram
Application
● Boost converters
● LED backlighting
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0213
NCE0213
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
ID (100℃)
Drain Current-Continuous(TC=100℃)
IDM Pulsed Drain Current
PD Maximum Power Dissipation
Derating factor
EAS Single pulse avalanche energy (Note 5)
TJ,TSTG
Operating Junction and Storage Temperature Range
Limit
200
±20
13
9
45
95
0.6
200
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE0213
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature (℃)
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10ID Current- Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE0213.PDF ] | |
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