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EMH2411R fiches techniques PDF

ON Semiconductor - N-Channel Power MOSFET / Transistor

Numéro de référence EMH2411R
Description N-Channel Power MOSFET / Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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EMH2411R fiche technique
Ordering number : ENA1421A
EMH2411R
N-Channel Power MOSFET
30V, 5A, 36.5mΩ, Dual EMH8
http://onsemi.com
Features
Low ON-resistance
Best suited for LiB charging and discharging switch
Common-drain type
2.5V drive
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Storage Temperature
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
30
±12
5
60
1.3
1.4
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-006
0.2
8
5
0.125 EMH2411R-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1
0.5
2.0
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
LL
TL LOT No.
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/52709PE MS IM TC-00001977 No. A1421-1/7

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