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EFC4621R fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence EFC4621R
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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EFC4621R fiche technique
Ordering number : ENA2180A
EFC4621R
Power MOSFET
24V, 9A, 18mN-Channel Dual EFCP
http://onsemi.com
Features
2.5V drive
Common-drain type
2KV ESD HBM
Protection diode in
Halogen free compliance
Applications
Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Source to Source Voltage
VSSS
Gate to Source Voltage
VGSS
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
IS
ISP PW10s, duty cycle1%
PT When mounted on ceramic substrate (5000mm20.8mm)
Tch
Storage Temperature
Tstg
Ratings
24
12
9
60
1.6
150
- 55 to +150
Unit
V
V
A
A
W
C
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
1.81
EFC4621R-TR
Ordering & Package Information
Device
Package
Shipping
EFC4621R-TR
EFCP
5000
pcs. / reel
note
Pb-Free
and
Halogen-Free
43
Packing Type: TR
Marking
TR
12
0.65
1: Source1
2: Gate1
3: Gate2
4: Source2
0.3
EFCP1818-4CE-022
Electrical Connection
4
Rg
3
Rg
2
Rg=200
1
FW
LOT No.
Semiconductor Components Industries, LLC, 2014
January, 2014
12314HK/51513TKIM TC-00002912 No.A2180-1/9

PagesPages 9
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